 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK2890-01MR Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Outline Drawings TO-220F Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol VDS ID ID[puls] VGS EAV PD Tch Tstg Rating 30 50 200 16 1441.5 50 +150 -55 to +150 Unit Remarks V A A V *1 mJ W C C *1 L=0.769mH, Vcc=12V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V VGS=0V VGS=16V VDS=0V ID=50A VGS=10V ID=50A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V RG=10 ID=100A VGS=10V L=100H Tch=25C Min. 30 1.0 Tch=25C Tch=125C VGS=4V VGS=10V 35 Typ. 1.5 10 0.2 10 8.0 5.3 70 3900 2000 850 17 70 250 180 1.0 65 0.12 Max. 2.0 500 1.0 100 10.5 6.8 5850 3000 1280 30 120 380 270 1.5 Units V V A mA nA m m S pF ns A V ns C 50 IF=50A VGS=0V Tch=25C IF=50A -di/dt=100A/s Tch=25C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Min. Typ. Max. 2.50 62.5 Units C/W C/W 1 FUJI POWER MOSFET Characteristics 2SK2890-01MR 2 FUJI POWER MOSFET 2SK2890-01MR 3 FUJI POWER MOSFET 2SK2890-01MR www.fujielectric.co.jp/fdt/scd 4 |
Price & Availability of 2SK2890-01MR
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |